Junctionless Field-Effect Transistors

Modern life runs on ever-smaller transistors. Phones, wearables and household appliances now outperform the room-sized computers of earlier decades, and the growth of connected devices in the internet-of-things era depends largely on shrinking metal-oxide semiconductor field-effect transistors (MOSFETs). Pushing conventional MOSFETs to smaller sizes without losing performance demands expensive, intricate manufacturing, because these devices rely on metallurgical junctions.

Junctionless field-effect transistors (JLFETs) take a different route by dropping those junctions altogether. A gated semiconductor film sets both the resistance of the film and the current that passes through it, which makes the devices simpler and less costly to build.

This reference gathers the current methods, techniques and research on JLFETs into a single volume. It explains the underlying physics of how these transistors operate, surveys newer architectures, and covers modeling and simulation approaches. It also compares performance metrics across designs and includes a calibrated simulation framework with guidance on Sentaurus TCAD software, so readers can study JLFETs, design new structures and work to improve their performance. It is written for CMOS device design researchers and advanced students of physics and semiconductor devices.